Consider the following statements A and B and identify the correct choice of the given answers.

(A) The width of the depletion layer in a p-n junction diode increases in forward bias.

(B) In an intrinsic semiconductor the Fermi energy level is exaclty in the middle of the forbidden gap.

A is false and B is true

When a p-n junction diode is forward biased the thickness of depletion layer decreases and thereby the current across the junction increases.

In an intrinsic semi-conductor, Fermi energy level will be in the middle of the forbidden gap.