Which of the following statements is true for a p-type semiconductor?

The correct answer is Option (3) → Holes are majority carriers and trivalent atoms are the dopant

A p-type semiconductor is made by doping silicon or germanium with a trivalent impurity (such as boron, aluminium or indium). Each impurity atom has one electron fewer than needed for the four covalent bonds, so it creates a hole. Holes are therefore the majority carriers and electrons (from thermal generation only) are the minority carriers.

Option (1) Holes are minority carriers and pentavalent atoms are the dopant — Incorrect. Both parts describe an n-type semiconductor: there holes are the minority carriers and the dopant is pentavalent.

Option (2) Electrons are minority carriers and pentavalent atoms are dopant — Incorrect. Electrons are indeed the minority carriers in p-type, but the dopant is trivalent, not pentavalent.

Option (3) Holes are majority carriers and trivalent atoms are the dopant — Correct. Trivalent dopants create holes, which become the majority carriers.

Option (4) Electrons are majority carriers and trivalent atoms are the dopant — Incorrect. The dopant is right, but electrons are the minority carriers in p-type.

NCERT (2026-27):
p-type Semiconductor – “This is obtained when Si or Ge is doped with a trivalent impurity like Al, B, In, etc.”

p-type Semiconductor – “… Thus, for such a material, the holes are the majority carriers and electrons are minority carriers. Therefore, extrinsic semiconductors doped with trivalent impurity are called p-type semiconductors.”