The cause of the potential barrier in a p-n diode is

concentration of positive and negative charges near the junction

During the formation of a junction diode. holes from p-region diffuse into n-region and electrons from n-region diffuse into p-region. In both cases, when an electrons meets a hole, they cancel the effect at each other and as a result, a thin layer at the junction becomes free from any of charges carriers. This is called depletion layer. There is a potential gradient in the depletion layer, negative 011 the p-side. and positive on the n-side. The potential difference thus developed across the junction is called potential barrier.