Match the LIST-I with LIST-II
| LIST-I (Materials) | LIST-II (Band gap) | ||
| A. | Sn | I. | 0.72 eV |
| B. | Ge | II. | 5.4 eV |
| C. | Si | III. | 0 eV |
| D. | C (diamond) | IV. | 1.1 eV |
Choose the correct answer from the options given below:
Answer & explanation
Correct answer: option 1
The correct answer is Option (1) → A - III, B - I, C - IV, D - II
The band gap Eg separates the valence band from the conduction band: it is zero for a metal, small for a semiconductor and large for an insulator. Down the carbon group (C, Si, Ge, Sn) the gap shrinks.
(A) Sn — this matches (III) 0 eV. Tin behaves as a metal: its valence and conduction bands overlap, so there is no gap.
(B) Ge — this matches (I) 0.72 eV. Germanium is a semiconductor with the smaller of the two semiconductor gaps.
(C) Si — this matches (IV) 1.1 eV. Silicon is a semiconductor with a larger gap than germanium.
(D) C (diamond) — this matches (II) 5.4 eV. Diamond is an insulator with a wide gap.
NCERT (2026-27):
Extrinsic Semiconductor – “… The difference in the resistivity of C, Si and Ge depends upon the energy gap between their conduction and valence bands. For C (diamond), Si and Ge, the energy gaps are 5.4 eV, 1.1 eV and 0.7 eV, respectively. Sn also is a group IV element but it is a metal because the energy gap in its case is 0 eV.”