The reverse biasing in a p-n junction diode

increases the potential barrier height

The correct answer is Option (2) → increases the potential barrier height **

Explanation:

In a reverse-biased p–n junction, the positive terminal of the battery is connected to the n-side and the negative terminal to the p-side. This causes:

• Majority carriers to be pulled away from the junction, thereby widening the depletion region.

• The potential barrier height increases, making it harder for charge carriers to cross the junction.

• The number of minority charge carriers contributing to current remains very small and nearly constant.

Correct statement: increases the potential barrier height.