Target Exam

CUET

Subject

Physics

Chapter

Semiconductors and Electronic Devices

Question:

Which of the following statements are correct?

(A) In a p-n junction diode, accumulation of electric charge of the opposite type on two sides of the junction produces an electric field and a potential barrier,
(B) the potential barrier opposes the movement of the majority charge carriers across the junction.
(C) In the reverse biased p-n junction, the width of the depletion layer decreases.
(D)In forward bias of a p-n junction, the potential barrier increases.

Choose the correct answer from the options given below:

Options:

(A) and (D) only

(A) and (C) only

(A) and (B) only

(C) and (B) only

Correct Answer:

(A) and (B) only

Explanation:

The correct answer is Option (3) → (A) and (B) only

(A) Correct — charge accumulation on both sides forms the potential barrier.

(B) Correct — the barrier opposes majority carriers.

(C) Incorrect — in reverse bias, depletion layer width increases, not decreases.

(D) Incorrect — in forward bias, potential barrier decreases.

Correct statements: (A), (B)