Donor energy level in 'n' type and acceptor energy level in 'p' type semiconductor are:
Answer & explanation
Correct answer: option 2
The correct answer is Option (2) → Closer to conduction band and closer to valence band respectively.
The impurity atoms add extra energy levels inside the forbidden gap. A donor atom holds a loosely bound extra electron, so its level lies just below the conduction band, and the electron reaches the conduction band with a very small supply of energy. An acceptor atom is short of an electron, so its level lies just above the valence band, and an electron from the valence band easily jumps into it, leaving a hole.
NCERT (2026-27):
Extrinsic Semiconductor – “… In the energy band diagram of n-type Si semiconductor, the donor energy level ED is slightly below the bottom EC of the conduction band and electrons from this level move into the conduction band with very small supply of energy. … Similarly, for p-type semiconductor, the acceptor energy level EA is slightly above the top EV of the valence band as shown in Fig. 14.9(b).”
