The first junction on transistor consisting of two back to back P-N Junction was invented in 1951 by william schockley.Later New Bipolar Junction Transistor(BJT) were invented.Transistor has three doped regions forming two P-N junction between them.There are two types of transistors (i) P-N-P and (ii) N-P-N .Each transistor has three segments (i) Emitter (ii) Base (iii) Collector. The size and level of doping is different of all three segments.For connecting in the circuit three terminals of a transistors are available - emitter , base and collector and it can be connected in three configuration Common Emitter(CE) , Common Base(CB) and Common Collector(CC).the transistor can be used as a device application depending on configuration used,the biasing done to the segments and operate in the region namely cut off , Active and Saturation.It can work as an amplifier , a switch and an oscillator too.Based on transistor knowledge give answer.

A silicon transistor having dc current amplification of $\beta = 100$ is used in a CE Configuration in a circuit below.In this circuit $I_B = 40\mu A(40 \times 10^{-6})$.When the load resistance of $2k\Omega$ is connected to the collector with $V_{CC} = 10V$.Select the correct option giving value for collector to emitter Voltage $V_{CE}$.

2V

$I_C = \beta I_B = 4\times 10^{-3}A$

$ V_{CE} = V_{CC} - I_C R_L = 10 - 4\times 10^{-3} \times 2\times 10^3 = 10 - 8 = 2V$