Read the passage and answer the question.

When the two types of semiconductors are joined together, diffusion of electrons and holes from their side of excess takes place and continues for a while after which a depletion layer is formed close to the junction on either side which stops any further diffusion of these carriers. A potential difference appears to have set up at the junction.

What are the potential barrier for Silicon and Germanium respectively?

0.3 V, 0.7 V

Memory point!!

Potential barrier in case of Silicon is 0.3 V and in case of Germanium is 0.7 V.