Out of the following statements, which s

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Target Exam

CUET

Subject

Physics

Chapter

Semiconductors and Electronic Devices

Question:

Out of the following statements, which statements explain the difference between forward biasing and reverse biasing in a p-n junction correctly?

Forward biasing in a p-n junction	Reverse biasing in a p-n junction
(A) p-side is connected to the +ve terminal and n-side to the -ve terminal of the battery.	p-side is connected to the -ve terminal and n-side to the +ve terminal of the battery.
(B) Depletion layer becomes thicker.	Depletion layer becomes thin.
(C) Resistance across the p-n junction Increases.	Resistance across the p-n junction decreases.
(D) the current is due to majority charge carriers.	the current is due to minority charge carriers.

Choose the correct answer from the options given below:

Options:

(A), (B) and (D) only

(B) and (D) only

(A) and (D) only

(B), (C) and (D) only

Correct Answer:

(A) and (D) only

Explanation:

The correct answer is Option (3) → (A) and (D) only

Check each statement:

(A) Correct → Forward bias: p-side to +ve, n-side to -ve. Reverse bias: p-side to -ve, n-side to +ve.

(B) Wrong → Forward bias reduces the depletion layer, reverse bias increases its thickness.

(D) Correct → Forward current is due to majority carriers; reverse current is due to minority carriers.

Answer: (A) and (D) are correct.