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For transistor action (1) Base, emitter and collector regions should have similar size and doping concentrations. (2) The base region must be very thin and lightly doped. (3) The emitter-base junction is forward biased and base collector junction is reverse based. (4) Both the emitter-base junction as well as the base collector junction are forward biased. |
(3) and (4) (4) and (1) (1) and (2) (2) and (3) |
(2) and (3) |
For transistor action, the base region must be very thin and lightly doped. Also, the emitter-base junction is forward biased and base-collector junction is reverse biased. |
