Which of the following statements are correct?

A. The process of generation of conduction electrons and holes and process of recombination is a simultaneous process.
B. To increase the conductivity of a semiconductor manifold, a few parts per million of a suitable impurity is added.
C. Extrinsic semiconductors doped with trivalent impurity are called n-type semiconductors.
D. During the formation of a p-n junction, two processes diffusion and drift occurs.
E. The thickness of depletion region is of the order of a millimeter.

Choose the correct answer from the options given below:

A, B and D Only

A. The process of generation of conduction electrons and holes and process of recombination is a simultaneous process.
B. To increase the conductivity of a semiconductor manifold, a few parts per million of a suitable impurity is added. This process is called impurity
C. Extrinsic semiconductors doped with trivalent impurity are called p-type semiconductors.
D. During the formation of a p-n junction, two processes diffusion and drift occurs.
E. The thickness of depletion region is very small i.e of the order of a micrometer.

The correct answer is Option (2) → A, B and D Only