$E_g$ (energy band-gap) for silicon is greater than that for germanium. Therefore, it can be concluded that

less number of electron hole pairs will be generated in silicon than in germanium at room temperature

Correct answer: less number of electron-hole pairs will be generated in silicon than in germanium at room temperature

Explanation:

The number of thermally generated electron-hole pairs in a semiconductor depends exponentially on the energy band-gap (E_g).

Since silicon has a larger band-gap (≈ 1.1 eV) compared to germanium (≈ 0.7 eV), it requires more energy to excite an electron from the valence band to the conduction band. Hence, at room temperature, fewer electron-hole pairs are generated in silicon than in germanium.