CUET Preparation Today
$E_g$ (energy band-gap) for silicon is greater than that for germanium. Therefore, it can be concluded that |
a greater number of electron hole pairs will be generated in silicon than in germanium at room temperature less number of electron hole pairs will be generated in silicon than in germanium at room temperature an equal number of electron hole pairs will be generated in both at lower temperatures an equal number of electron hole pairs will be generated in both at higher temperatures |
less number of electron hole pairs will be generated in silicon than in germanium at room temperature |
Right Answer not mentioned in NTA Answer key |
