Consider the following statements A and B and identify the correct choice of the given answers.
(A) The width of the depletion layer in a p-n junction diode increases in forward bias
(B) In an intrinsic semiconductor the fermi energy level is exactly in the middle of the forbidden energy gap.
Answer & explanation
Correct answer: option 3
In a p-n junction the width of the depletion layer decreases in forward bias.