Target Exam

CUET

Subject

Physics

Chapter

Semiconductors and Electronic Devices

Question:

Which of the following statements are correct?

(A) The current under reverse bias is essentially voltage dependent on a critical reverse bias voltage.
(B) The diode gets destroyed due to overheating if the forward or reverse current exceeds the rated value.
(C) In forward bias measurement, we use a milliammeter since the expected current is large, while a microammeter is used in reverse bias to measure the current.
(D) The drift current is of the order of a few μA

Choose the correct answer from the options given below:

Options:

(A), (B) and (D) only

(A), (B) and (C) only

(A), (B), (C) and (D)

(B), (C) and (D) only

Correct Answer:

(B), (C) and (D) only

Explanation:

The correct answer is Option (4) → (B), (C) and (D) only

(A) The current under reverse bias is essentially voltage dependent on a critical reverse bias voltage. Incorrect. In reverse bias, current is almost independent of voltage (until breakdown). It does not significantly depend on voltage before the critical breakdown point.

(B) The diode gets destroyed due to overheating if the forward or reverse current exceeds the rated value.Correct. If current exceeds the rated value, the diode may overheat and get damaged.

(C) In forward bias measurement, we use a milliammeter since the expected current is large, while a microammeter is used in reverse bias to measure the current. Correct. 

Forward bias → large current (mA) → milliammeter
Reverse bias → very small current (μA) → microammeter

(D) The drift current is of the order of a few μA . Correct. Drift current (reverse current) is very small, typically in μA range.