Target Exam

CUET

Subject

Physics

Chapter

Semiconductors and Electronic Devices

Question:

Which of the following statements are correct?

(A) The current under reverse bias is essentially voltage dependent on a critical reverse bias voltage.
(B) The diode gets destroyed due to overheating if the forward or reverse current exceeds the rated value.
(C) In forward bias measurement, we use a milliammeter since the expected current is large, while a microammeter is used in reverse bias to measure the current.
(D) The drift current is of the order of a few μA

Choose the correct answer from the options given below:

Options:

(A), (B) and (D) only

(A), (B) and (C) only

(A), (B), (C) and (D)

(B), (C) and (D) only

Correct Answer:

(A), (B), (C) and (D)

Explanation:

The correct answer is Option (3) → (A), (B), (C) and (D) **

(A) True — reverse current increases rapidly only near the critical reverse breakdown voltage.

(B) True — excessive forward or reverse current overheats and damages the diode.

(C) True — forward bias gives large current (mA), reverse bias gives very small current (μA).

(D) True — drift current in a diode is typically only a few μA.

All statements (A), (B), (C), and (D) are correct.