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Assertion : The energy gap between the valence band and conduction band is greater in silicon than in germanium. Reason : Thermal energy produces fewer minority carriers in silicon than in germanium.
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Both (A) and (R) are true and (R) is the correct explanation of (A). Both (A) and (R) are true but(R) is NOT the correct explanation of (A). (A) is true but (R) is false. Both (A) and (R) are false. |
Both (A) and (R) are true but(R) is NOT the correct explanation of (A). |
The energy gap between valence band and conduction band in germanium is 0.76 eV and the energy gap between calence band and conduction band in silicon is 1.1eV. Because of larger energy gap in silicon thermal energy produces fewer minority carriers in silicon than in germanium. |
