CUET Preparation Today
Which of the following statement is correct regarding a p-n junction diode. |
During reverse bias, the width of the depletion region decreases. During forward bias, the barrier height increases due to applied voltage. The diode current during reverse bias is not much dependent on the applied voltage upto the breakdown voltage. A milliammeter is used to measure current in a reverse biased diode. |
The diode current during reverse bias is not much dependent on the applied voltage upto the breakdown voltage. |
The correct answer is Option (3) → The diode current during reverse bias is not much dependent on the applied voltage upto the breakdown voltage. Analysis of options: 1. During reverse bias, the width of the depletion region actually increases, not decreases → Incorrect 2. During forward bias, the barrier height decreases due to applied voltage → Incorrect 3. The diode current during reverse bias is very small and almost independent of applied voltage up to breakdown → Correct 4. A milliammeter is not suitable for measuring reverse current as it is very small (usually μA range) → Incorrect Answer: The diode current during reverse bias is not much dependent on the applied voltage upto the breakdown voltage |
