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Forward bias applied to a p-n junction diode |
widens the depletion region increases the number of donors on the n-side decreases the electric field in the depletion region increases the potential difference across the depletion region |
decreases the electric field in the depletion region |
The correct answer is Option (3) → decreases the electric field in the depletion region In a p-n junction diode: • The depletion region is formed due to diffusion of carriers, leaving behind immobile ions that create an electric field opposing further diffusion. • When forward bias is applied, the external voltage reduces the potential barrier across the junction. • This reduction in barrier potential decreases the width of the depletion region. • Consequently, the electric field inside the depletion layer also decreases, allowing majority carriers to flow across the junction. Therefore, the correct effect of forward bias is: it decreases the electric field in the depletion region. |
