Practicing Success
The cause of the potential barrier in a p-n junction diode is |
Depletion of positive charges near the junction Depletion of negative charges near the junction Concentration of positive charges near the junction Concentration of positive and negative charges near the junction |
Concentration of positive and negative charges near the junction |
We know that the concentration of holes and electrons are greater in p and n regions respectively with some concentration difference. This concentration difference establishes density gradient and it results into diffusion. Therefore a potential barrier is produced due to the concentration of positive and negative charges near the junction. |